Virtual reliability assessment of integrated power switches based on multi-domain simulation approachSOLOMALALA, P; SAIZ, J; MERMET-GUYENNET, M et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1343-1348, issn 0026-2714, 6 p.Conference Paper

Simple PWM modulator topology with excellent dynamic behaviorPOULSEN, Søren; ANDERSEN, Michael A. E.IEEE Applied Power Electronics Conference and Exposition. 2004, isbn 0-7803-8269-2, 3Vol, vol1, 486-492Conference Paper

Power utility maximization for multiple-supply systems by a load-matching switchPARK, Chulsung; CHOU, Pai H.International Symposium on Low Power Electronics and Design. 2004, pp 168-173, isbn 1-58113-929-2, 1Vol, 6 p.Conference Paper

High Temperature Calibration of a Compact Model for GaN-on-Si Power SwitchesSTOFFELS, Steve; MARCON, Denis; GEENS, Karen et al.International workshop on THERMal INvestigations of ICs and Systems. 2011, pp 159-163, isbn 978-2-355-00018-8, 1Vol, 5 p.Conference Paper

Efficient testing and diagnosis of faulty power switches in SOCsGOEL, S. K; MEIJER, M; PINEDA DE GYVEZ, J et al.IET computers & digital techniques (Print). 2007, Vol 1, Num 3, pp 230-236, issn 1751-8601, 7 p.Conference Paper

Study of the stepless inductance change using power switchDONGBAI ZHU.IEEE Industial Electronics Society. Annual conference. 2004, isbn 0-7803-8730-9, 3Vol, Vol1, 700-703Conference Paper

Built-in self test design of power switch with clock-gated charge/discharge transistorCHEN XIN; WU NING; BAI NA et al.IET computers & digital techniques (Print). 2014, Vol 8, Num 2, pp 59-69, issn 1751-8601, 11 p.Article

High-density data-retention power gating structure using a four-terminal double-gate deviceKIM, K; DAS, K. K; CHUANG, C.-T et al.International journal of electronics. 2007, Vol 94, Num 3-4, pp 403-412, issn 0020-7217, 10 p.Article

Flexible active cycle stress testing of smart power switchesGLAVANOVICS, Michael; KOCK, Helmut; KOSEL, Vladimir et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1790-1794, issn 0026-2714, 5 p.Conference Paper

High speed switch using pairs of pHEMTs with shifted gatesMIL'SHTEIN, S; LIESSNER, C.Microelectronics journal. 2005, Vol 36, Num 3-6, pp 316-318, issn 0959-8324, 3 p.Conference Paper

Half-bridge and full-bridge cell based multilevel PWM inverter with cascaded transformersKANG, Feel-Soon; PARK, Sung-Jun; KIM, Cheul-U et al.MWSCAS : Midwest symposium on circuits and systems. 2004, isbn 0-7803-8346-X, 3Vol, Vol II, 273-276Conference Paper

System impact of silicon carbide power devicesOZPINECI, Burak; TOLBERT, Leon M; ISLAM, Syed K et al.International journal of high speed electronics and systems. 2002, Vol 12, Num 2, pp 439-448, 10 p.Conference Paper

Towards Process Variation-Aware Power GatingYEH, Chingwei; CHEN, Yuan-Chang; WANG, Jinn-Shyan et al.IEEE transactions on very large scale integration (VLSI) systems. 2012, Vol 20, Num 11, pp 1929-1937, issn 1063-8210, 9 p.Article

Evaluation of an Electrical Method for Detection of Die Attach Imperfections in Smart Power Switches Using Transient Thermal FEM SimulationsKOSEL, V; GLAVANOVICS, M; SCHEIKL, E et al.International workshop on thermal investigation of ICs and systems. 2008, pp 204-207, isbn 978-2-35500-008-9, 1Vol, 4 p.Conference Paper

Current state-of-the-art and future prospects for power semiconductor devices in power transmission and distribution applicationsJOHNSON, C. Mark.International journal of electronics. 2003, Vol 90, Num 11-12, pp 667-693, issn 0020-7217, 27 p.Article

A high power CMOS switch using substrate body switching in multistack structureAHN, Minsik; BYUNG SUNG KIM; LEE, Chang-Ho et al.IEEE microwave and wireless components letters. 2007, Vol 17, Num 9, pp 682-684, issn 1531-1309, 3 p.Article

Localization of sensitive areas of power AC switch under thermal laser stimulationDEBLEDS, S; REBRASSE, J. P; DANTAS DE MORAIS, L et al.Microelectronics and reliability. 2007, Vol 47, Num 9-11, pp 1569-1573, issn 0026-2714, 5 p.Conference Paper

430-V 12.4-mΩ · cm² normally OFF 4H-SiC lateral JFETMING SU; KUANG SHENG; YUZHU LI et al.IEEE electron device letters. 2006, Vol 27, Num 10, pp 834-836, issn 0741-3106, 3 p.Article

Individual cell equalization for series connected lithium-ion batteriesLEE, Yuang-Shung; CHENG, Ming-Wang; YANG, Shun-Ching et al.IEICE transactions on communications. 2006, Vol 89, Num 9, pp 2596-2607, issn 0916-8516, 12 p.Article

A parametric study for Si p⁺nn⁺ diodes in picosecond closing switch applicationsFEI ZHANG; WEN YU; CHENGFANG LI et al.Solid-state electronics. 2005, Vol 49, Num 3, pp 399-403, issn 0038-1101, 5 p.Article

Embedded I/O PAD Circuit Design for OTP Memory Power-Switch FunctionalityHUANG, Shao-Chang; CHEN, Ke-Horng; LIN, Wei-Yao et al.IEEE transactions on very large scale integration (VLSI) systems. 2012, Vol 20, Num 4, pp 746-750, issn 1063-8210, 5 p.Article

Don't-Care Gating (DCG) TCAM Design Used in Network Routing TableCHANG, Yen-Jen.IEEE transactions on very large scale integration (VLSI) systems. 2010, Vol 18, Num 11, pp 1599-1607, issn 1063-8210, 9 p.Article

Compact polarization-insensitive 2x2 optical switchAGASHE, S. S; SHIU, K.-T; FORREST, S. R et al.Lasers and Electro-optics Society. 2004, isbn 0-7803-8557-8, 2Vol, Vol1, 380-381Conference Paper

Trench power MOSFET lowside switch with optimized integrated schottky diodeCALAFUT, Daniel.International Symposium on Power Semiconductor Devices & ICs. 2004, pp 397-400, isbn 4-88686-060-5, 4 p.Conference Paper

Effect of converter packaging techniques on device electrical conductionGATTOZZI, Angelo L; PISH, Scott P; PAPPAS, John A et al.IEEE transactions on magnetics. 2003, Vol 39, Num 1, pp 418-421, issn 0018-9464, 4 p.Conference Paper